Read,“Statistics of recombination of holes and electrons,”Phys. Hall,“Electron-hole recombination in germanium,”Phys. Fitzgerald,“Surface effects on pn junctions–Characteristics of surface space-charge regions under non-equilibrium conditions,”Solid-State Electron.,9(8),783–806,1966. This process is experimental and the keywords may be updated as the learning algorithm improves.Ī. These keywords were added by machine and not by the authors. The discussion of a JFET follows in the next chapter Keywords This chapter focuses on the MOSFET which is by far the most common. A metal-semiconductor field-effect transistor, or MESFET, operates similarly to a JFET, except that the gate consists of a Schottky-barrier diode formed between a metal in contact with the semiconductor The source and drain are of the same polarity type as the body. In a junction field-effect transistor or JFET, one or two pn junctions act as the gate that modulates the width of a conductive path between the source and drain. This type of transistor is also known as an insulated field-effect transistor, IGFET, because the gate is separated from the body by an insulator. The source and drain are of opposite polarity to the body. In a MOSFET, the gate consists of an MOS structure that slightly overlaps two junctions located on either side of the gate. There are three types of field-effect transistors shown in Fig. The modulated region of the transistor body is referred to as the channel. The field created by a voltage applied to a gate modulates the resistance of region under the gate between source and drain. A field-effect transistor consists of four terminals: gate, source, drain and body or substrate (Fig.
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